Chapter 5
15 min read
Section 41 of 70

Band Structure Fundamentals

Electronic Structure and Properties

Learning Objectives

By the end of this section you should be able to:

  1. Explain in plain language why isolated atomic levels turn into continuous bands when the atoms are packed into a crystal — and tell the story two different ways: bottom-up (tight-binding) and top-down (nearly-free electrons).
  2. Recognise the band structure as the function En(k)E_n(\mathbf{k}) — a finite catalogue of energies indexed by a band number nn and a Brillouin-zone wavevector k\mathbf{k}.
  3. Read a band structure plot fluently: identify the Fermi level, the valence band maximum (VBM), the conduction band minimum (CBM), and distinguish a direct gap from an indirect one.
  4. Connect band slope to group velocity v=1kEn\mathbf{v} = \hbar^{-1} \nabla_{\mathbf{k}} E_n and band curvature to effective mass (m)1=22E/k2(m^{*})^{-1} = \hbar^{-2} \partial^2 E / \partial k^2 — the two quantities that determine how electrons in a band actually behave.
  5. Trace a band structure all the way back to the VASP files that produced it: KPOINTS (line mode), EIGENVAL, vasprun.xml, and the INCAR tags ICHARG=11\texttt{ICHARG}=11, LORBIT=11\texttt{LORBIT}=11.
One-line preview: a band structure is the answer to the question "if I drop one electron into this crystal, what energies are available to it, and which directions can it flow?" Every electronic property a materials scientist cares about — colour, conductivity, mobility, magnetism — is a sentence written in the vocabulary of En(k)E_n(\mathbf{k}).

From a Single Atom to a Crystal

Take a hydrogen atom. Solve the Schrödinger equation. You get a familiar ladder of discrete energies: 13.6eV-13.6\,\text{eV} for 1s, 3.4eV-3.4\,\text{eV} for 2s, and so on. Now bring a second hydrogen atom close. Each atomic level splits into two — bonding and anti-bonding — exactly like the lab experiment of coupling two pendulums of identical frequency. Bring a third atom and you get three slightly displaced levels. Bring NN atoms and you get NN levels. Bring an Avogadro's number of atoms — and the levels are so dense that no instrument can distinguish them. They have become a band.

Why splitting happens at all

Two atomic orbitals at the same energy on neighbouring sites can mix. The mixed states, like coupled oscillators, settle into one symmetric combination (lower energy, bonding) and one antisymmetric combination (higher energy, antibonding). The energy split is roughly 2t2t, where tt is the hopping integral — essentially the matrix element of the Hamiltonian between neighbouring orbitals. In a chain of NN atoms, the eigenvalues of the tight-binding Hamiltonian are En=2tcos ⁣(nπN+1)E_n = -2t\,\cos\!\big(\tfrac{n\pi}{N+1}\big) for n=1,,Nn=1,\dots,N. As NN \to \infty these dots fill out the entire interval [2t,+2t][-2t,\,+2t] — the band.

That is the bottom-up picture: atoms → molecules → solids → bands. It is a story chemists tell, and it is exactly right. Where it gets interesting is when you realise that the relabelling nkn \to k at the end is not cosmetic. The crystal's translation symmetry hands you back something better than discrete eigenvalues — a continuous function E(k)E(k) on the first Brillouin zone, with a beautiful and physical interpretation. Before we get there, let's watch the levels close up with our own eyes.


Interactive — Levels Become Bands

Drag the slider through NN. Each cyan tick is an allowed energy for a chain of NN hydrogenic atoms with hopping t=1t = 1. The dashed amber lines E=±2tE = \pm 2t are the band edges in the infinite limit.

From discrete atomic levels to a continuous band

drag to grow the chain

Each blue tick is an allowed energy of a 1-D tight-binding chain of N atoms with hopping t = 1. Eigenvalues are En = −2t·cos(nπ/(N+1)). As N grows, the discrete levels close up into a band of width 4t.

-2-1012Energy (units of t)E = +2t (band top)E = −2t (band bottom)chain of 8 atoms
Atoms
N = 8
Lowest level
-1.879
Highest level
1.879
Band width
3.759 t
jump to:
A nanocluster. The levels are denser; the "edges" of what will become a band are already visible at ±2t.

Two observations to lock in. First, the band edges ±2t\pm 2t do not depend on NN — they are set by the hopping alone. The band width (4t4t) is a local property of the chemistry; only the filling of the band depends on how many atoms (and electrons) you have. Second, the levels never escape outside [2t,+2t][-2t,\,+2t] — the band has a hard floor and a hard ceiling. Outside that interval is a gap, the forbidden region between this band and the next one.

A test you can run in your head

Compare N=2N=2 with N=8N=8. The two-atom case gives levels ±t\pm t (bonding/antibonding of H₂). The eight-atom case gives eight levels still bounded by ±2t\pm 2t but now packed in between. Now hit N=120N = 120: you cannot see individual levels any more, only a coloured strip. That strip is what a solid-state physicist means when they say "the s-band of this element."


The Bloch Catalog: E as a Function of (n, k)

From Section 3.5 we already know the punch line: in a periodic potential, every electronic eigenstate carries two labels — a band index nn (which discrete "solution" we are on) and a wavevector k\mathbf{k} (which point of the Brillouin zone). The corresponding eigenenergy

En(k)  =  ψn,kH^ψn,kE_n(\mathbf{k}) \;=\; \langle \psi_{n,\mathbf{k}}\,|\,\hat{H}\,|\,\psi_{n,\mathbf{k}}\rangle

is a function of two variables: a discrete index n{1,2,3,}n \in \{1, 2, 3, \dots\} and a continuous vector k\mathbf{k} running over the first Brillouin zone. This function is the band structure.

The single most important sentence in this chapter

A band structure is a finite catalogue of energy surfaces, indexed by band number, defined over the Brillouin zone. Every electronic property of the crystal — total energy, density of states, optical absorption, electrical conductivity, Hall response — can be derived from En(k)E_n(\mathbf{k}) and its gradients.

Why "catalogue"? Because for a fixed k\mathbf{k}, the Schrödinger equation in the plane-wave basis becomes a finite (but large) matrix eigenvalue problem, and matrices have a finite, ordered list of eigenvalues. Numbering those eigenvalues from the bottom gives the band index nn. Doing this at every k\mathbf{k} in the Brillouin zone and stacking the results gives the bands.

ObjectDomainWhat it isWhere it lives
Eₙ(k)n ∈ ℤ⁺, k ∈ BZEigenenergies of Bloch statesEIGENVAL, vasprun.xml
ψₙ,ₖ(r)SameBloch wavefunctionWAVECAR (binary)
uₙ,ₖ(r)SameCell-periodic part of ψCHGCAR (squared, summed over n)
fₙ(k)SameOccupation: 1 if Eₙ(k) < EF else 0FERMI level in OUTCAR

The Anatomy of a Band Structure Plot

A band structure plot is a one-dimensional cross-section of the function En(k)E_n(\mathbf{k}). The horizontal axis is a path through the Brillouin zone — a sequence of straight-line segments joining special points like Γ,X,L,K,M\Gamma, X, L, K, M. The vertical axis is energy, almost always shifted so that the Fermi level EFE_F sits at zero. Each curve in the plot is one band EnE_n.

Six features every materials scientist looks for in the first three seconds:

FeatureVisual signatureTells you about
Fermi level E_FHorizontal line at E = 0 (by convention)Where electrons stop filling at T = 0
Valence band maximum (VBM)Highest band crest below E_FWhere holes live
Conduction band minimum (CBM)Lowest band trough above E_FWhere electrons live after excitation
Band gap E_gVertical separation CBM − VBMInsulator? Semiconductor? Metal?
Direct vs indirectSame k for VBM and CBM, or differentWhether photons couple efficiently
Curvature near band edgesSharp = light electron, flat = heavyEffective mass, mobility

A read-off vocabulary

When a paper writes "Si has an indirect gap of 1.1 eV from Γ to a point near X", decode it as: the highest occupied band peaks at k=Γ\mathbf{k} = \Gamma; the lowest unoccupied band has its minimum at a different k\mathbf{k}, somewhere along ΓX\Gamma \to X; and the energy difference between those two extrema is Eg=1.1eVE_g = 1.1\,\text{eV}. Same data, two languages.


Interactive — Folding Parabolas, Opening Gaps

The bottom-up tight-binding story is one way to derive bands. The complementary top-down story starts from a free electron gas — the bare-bones quantum mechanics E=2k2/2mE = \hbar^2 k^2 / 2m — and asks what happens when you slowly turn on a periodic potential. The widget below is the cleanest visualisation of that picture.

Folding plane-wave parabolas, opening band gaps

drag V to add a periodic potential

Faded grey curves are free-electron parabolas E = (k + nG)² in the extended-zone scheme (units G = 2π/a, ℏ²/2m = 1). The solid coloured curves are the actual bands of a 1D crystal with potential V·2cos(2πx/a), plotted only inside the first Brillouin zone [−π/a, π/a].

−π/a+π/aΓ-3-2-10123k (units of π/a)0246810Energy (ℏ²G²/2m units)
presets:
gap @ ±π/a: 0.000
gap @ Γ (bands 2–3): 0.000
Empty lattice (V = 0). The free-electron parabola has been folded into the first Brillouin zone by reciprocal lattice vectors. The bands cross freely at the zone boundary and at Γ — these are unprotected degeneracies of the empty lattice.

Three things to do with the slider, in order:

  1. Set V = 0 (free electron limit). The dashed grey parabolas are E=(k+nG)2E = (k + nG)^2 for n=1,0,1n = -1, 0, 1. Inside the first BZ, the coloured lines are exactly the same parabolas folded back into [π/a,π/a][-\pi/a, \pi/a] — this is the empty-lattice band structure. Notice that curves cross at k=±π/ak = \pm \pi/a and at k=0k = 0: those crossings are accidental degeneracies of the empty lattice.
  2. Drag V up to ~0.4 (nearly free electrons). The crossings turn into avoided crossings. A gap opens at every point where two plane waves were degenerate. At the zone boundary the gap is exactly 2V2|V| (read it off the red marker). This is the textbook nearly-free-electron result, and it is the origin of every band gap in a covalent or ionic insulator.
  3. Push V toward 1.5 (strong potential). Watch the lowest band flatten. The lower it goes, the more it looks like a cosine — the tight-binding band of the previous interactive. The two pictures are the same picture, viewed from opposite ends.

Why the gap opens — the 2-by-2 secret

At the zone boundary, two plane waves with k=+π/ak = +\pi/a and kG=π/ak - G = -\pi/a share the same kinetic energy. The Hamiltonian in that 2-D subspace is

H2×2=(ε0VVε0)H_{2\times 2} = \begin{pmatrix} \varepsilon_0 & V \\ V & \varepsilon_0 \end{pmatrix}

which has eigenvalues ε0±V\varepsilon_0 \pm V. The split is exactly 2V2V: that is the gap. Every crystal's electronic gap is, fundamentally, a 2×2 perturbation theory done at the right place in reciprocal space.


Why We Plot Along High-Symmetry Paths

A band structure in three dimensions is a function on a 3-D Brillouin zone — that means each band is a 3-D iso-energy hypersurface. We cannot plot that on paper. So we cheat: we pick a 1-D path through the most physically interesting points and plot EnE_n along the path.

The points are not arbitrary — they are the high-symmetry points of the Brillouin zone introduced in Section 3.4: Γ\Gamma (the centre), XX, LL, KK, MM, etc. They matter because:

  • The Hamiltonian has extra symmetry there, so eigenstates carry extra quantum numbers and degeneracies show up.
  • Band extrema (the VBM and CBM) almost always sit at high-symmetry points or along high-symmetry lines — physics is conservative about where it puts important things.
  • Different conventions agree on the labelling, so two papers using different DFT codes are describing the same path.

For an FCC Brillouin zone (Si, Ge, GaAs, CdSe in zincblende), the canonical path is LΓXWKΓL \to \Gamma \to X \to W \to K \to \Gamma. For a simple cubic BZ it is ΓXMΓR\Gamma \to X \to M \to \Gamma \to R. You don't need to memorise these — VASP's band-structure tools and SeeK-path will hand them to you for any space group. What you do need is to understand that the wiggles you see on a band structure plot are 1-D cross sections of a higher-dimensional landscape.


Direct vs. Indirect Band Gaps

For semiconductors the single most decisive feature of the band structure is the relative location of the VBM and the CBM in the Brillouin zone.

TypeVBM and CBM at...ExamplesWhy it matters
Direct gapthe same kGaAs, CdSe, InPPhotons (k ≈ 0) can pump electrons across the gap directly. Efficient LEDs and lasers.
Indirect gapdifferent kSi, Ge, AlAsNeed a phonon to absorb/emit the missing crystal momentum. Bad for light emission, fine for transistors.

The reason a direct gap matters for optics is conservation of crystal momentum. A photon at visible frequency carries kphoton2π/λ103A˚1k_\text{photon} \approx 2\pi/\lambda \sim 10^{-3}\,\text{Å}^{-1}, which on a Brillouin-zone scale (1A˚1\sim 1\,\text{Å}^{-1}) is essentially zero. A photon-driven transition is therefore a vertical arrow on the band-structure plot. If your VBM and CBM sit at the same k\mathbf{k}, the arrow finds them; if not, you need a phonon to supply the missing Δk\Delta \mathbf{k} — a slow, three-body process. This is why silicon makes lousy LEDs and GaAs makes the laser in your CD player.

Why this is the first design lever in optoelectronics

When a synthesis paper announces a new direct-gap material in the visible range, the news is usually not the value of the gap but the fact that it is direct. Mn-doped CdSe quantum dots — the case study of Chapter 6 — are a direct-gap II-VI material; that is exactly why they are useful as red-emitters in displays. We will compute that band structure ourselves and read the directness off the plot.


Group Velocity and Effective Mass

A band structure is more than a list of allowed energies. The shape of each band — its slopes and curvatures — encodes how electrons in that band actually move and respond to forces. Two derivatives of En(k)E_n(\mathbf{k}) do all the work.

Group velocity (first derivative)

A Bloch electron in band nn at wavevector k\mathbf{k} is a wave packet that travels at the group velocity

vn(k)  =  1kEn(k)\mathbf{v}_n(\mathbf{k}) \;=\; \frac{1}{\hbar}\,\nabla_{\mathbf{k}}\,E_n(\mathbf{k})

Same formula as a free particle (v=k/mv = \hbar k / m becomes v=(1/)dE/dkv = (1/\hbar)\,dE/dk when you differentiate E=2k2/2mE = \hbar^2 k^2/2m), but now the function En(k)E_n(\mathbf{k}) is set by the crystal, not the vacuum. The slope of a band is the velocity of an electron in that state. Flat band → near-zero velocity → localised electron. Steep band → fast electron. At a band extremum, the slope is zero: an electron exactly at the VBM or CBM does not move on average.

Effective mass (second derivative)

Newton's second law for a Bloch electron in an external force F\mathbf{F} reads

k˙=F,v˙=12kkEnF\hbar\,\dot{\mathbf{k}} = \mathbf{F}, \qquad \dot{\mathbf{v}} = \frac{1}{\hbar^2}\,\nabla_{\mathbf{k}}\nabla_{\mathbf{k}}\,E_n \cdot \mathbf{F}

The matrix (m)ij1=22En/kikj(m^*)^{-1}_{ij} = \hbar^{-2}\,\partial^2 E_n / \partial k_i \partial k_j plays the role of an inverse mass tensor. In an isotropic minimum,

1m  =  122Enk2\frac{1}{m^*} \;=\; \frac{1}{\hbar^2}\,\frac{\partial^2 E_n}{\partial k^2}

which is just the curvature of the band, expressed as a mass. Sharp parabolic minima → light, mobile carriers (GaAs has me0.07m0m^*_e \approx 0.07\,m_0). Flat minima → heavy, sluggish carriers. We will return to this in Section 5.4 when we compute carrier mobilities.

What you actually do at a desk

Open a band structure plot. Find the conduction band minimum. Eyeball whether it looks like a sharp parabola or a flat saucer. If sharp: high-mobility electrons; expect transistor potential. If flat: poor transport; could be a flat-band material (a hot research topic in 2025–26 because of strong correlations).


Band Structure in VASP — From INCAR to a Plot

Computing a band structure in VASP is a two-step exercise. Step 1: a normal self-consistent calculation on a uniform Monkhorst–Pack k-grid, which produces a converged charge density n(r)n(\mathbf{r}) stored in CHGCAR. Step 2: a non-self-consistent calculation on a densely sampled high-symmetry path, which uses that charge density unchanged and only diagonalises the Kohn–Sham Hamiltonian at the new k-points. The two-step trick saves cost and guarantees that the path and the SCF use the same self-consistent potential.

Step 1 — the SCF calculation

📝text
1# INCAR (step 1: self-consistent)
2SYSTEM = CdSe zincblende SCF
3PREC   = Accurate
4ENCUT  = 400        # plane-wave cutoff (eV) — set by convergence test
5EDIFF  = 1E-6       # SCF tolerance (eV)
6ISMEAR = 0          # Gaussian smearing for semiconductor
7SIGMA  = 0.05
8LCHARG = .TRUE.     # write CHGCAR for step 2
9LWAVE  = .FALSE.    # WAVECAR not needed for non-SCF
📝text
1# KPOINTS (step 1: uniform grid)
2Monkhorst-Pack
30
4Gamma
58 8 8
60 0 0

Step 2 — the band structure run

📝text
1# INCAR (step 2: non-SCF along high-symmetry path)
2SYSTEM = CdSe zincblende bands
3PREC   = Accurate
4ENCUT  = 400
5ICHARG = 11         # read CHGCAR, do not update density (non-SCF)
6LORBIT = 11         # write per-atom, per-orbital projections (PROCAR)
7ISMEAR = 0
8SIGMA  = 0.05
9NBANDS = 32         # at least valence + a healthy conduction stack
📝text
1# KPOINTS (step 2: line mode through L-Γ-X-W-K-Γ for FCC)
2Bands along high-symmetry lines
340                  ! 40 points per segment
4Line
5Reciprocal
6
70.5  0.5  0.5  L
80.0  0.0  0.0  Gamma
9
100.0  0.0  0.0  Gamma
110.5  0.0  0.5  X
12
130.5  0.0  0.5  X
140.5  0.25 0.75 W
15
160.5  0.25 0.75 W
170.375 0.375 0.75 K
18
190.375 0.375 0.75 K
200.0  0.0  0.0  Gamma

What the files mean to you

  • EIGENVAL — plain text, lists En(ki)E_n(\mathbf{k}_i) for every band nn at every k-point of the path. This is the band structure as raw data.
  • vasprun.xml — XML with the same eigenvalues plus metadata (Fermi level, k-point coordinates, k-point weights, full INCAR, etc.). All modern plotting tools (pymatgen, sumo, vaspkit, p4vasp) read this.
  • PROCAR — per-atom, per-orbital projections of eachψn,k\psi_{n,\mathbf{k}}; this is what you colour the bands by when you want to say "the VBM is mostly Se 4p, the CBM is mostly Cd 5s."
  • OUTCAR — log file; search for E-fermi to align your plot.

Plotting in five lines of pymatgen

🐍python
1from pymatgen.io.vasp import Vasprun, BSVasprun
2from pymatgen.electronic_structure.plotter import BSPlotter
3
4vr  = BSVasprun("vasprun.xml", parse_projected_eigen=True)
5bs  = vr.get_band_structure(line_mode=True)
6BSPlotter(bs).get_plot(ylim=(-6, 6)).savefig("bands.png", dpi=200)

The result is a publication-quality plot with bands coloured by spin (if spin-polarised), the Fermi level dashed at zero, and the high-symmetry labels along the bottom axis. From here, every analysis in this chapter — DOS, effective masses, optical absorption — is a few-line extension of the same code.

Two convergence tests you cannot skip

Before trusting any band structure: (i) converge ENCUT until the total energy changes by less than 1meV/atom1\,\text{meV/atom}, and (ii) converge the k-grid in step 1 until the gap value, the VBM position, and the CBM position stop moving. A band structure on an unconverged density is a beautifully drawn lie. Section 6.3 walks through these tests on CdSe explicitly.


Looking Ahead — The Map of Chapter 5

With En(k)E_n(\mathbf{k}) in hand, the rest of this chapter unpacks every physical observable you can squeeze out of it.

SectionTopicWhat it adds
5.2Density of StatesIntegrate Eₙ(k) over the BZ to get DOS(E) — what the optical and thermodynamic experiments actually see
5.3Metals, Semiconductors, InsulatorsReading conductivity off the band-filling and the gap
5.4Effective Mass and Carrier TransportFrom band curvature to mobility, conductivity, and Drude physics
5.5Optical Properties from DFTVertical transitions, dielectric tensor, absorption spectrum
5.6Magnetic Ordering and SpinSpin-resolved bands, ferromagnetic vs antiferromagnetic ground states
5.7Spin-Orbit CouplingHow relativistic terms split bands — crucial for Mn:CdSe
5.8Defects and DopingMid-gap states, charge transition levels, formation energies
5.9Quantum Confinement in NanocrystalsFrom bulk bands to discrete dot levels — the bridge to Chapter 6
5.10Beyond DFT: GW and Hybrid FunctionalsWhy DFT band gaps are wrong, and how to fix them

Summary

  • A band is what happens to a discrete atomic level when atoms are coupled into an infinite periodic chain: the discrete eigenvalues fill in to a continuous strip of width set by the hopping integral.
  • The band structure En(k)E_n(\mathbf{k}) is a finite catalogue of energy surfaces, indexed by band number, defined over the first Brillouin zone. It is the central object of solid-state physics.
  • Two derivations of bands meet in the middle: bottom-up tight-binding (chemistry, atomic levels) and top-down nearly-free-electrons (parabolas folded into the BZ with avoided crossings of size 2V2|V|).
  • A band structure plot is a 1-D slice of En(k)E_n(\mathbf{k}) along a high-symmetry path. Every paper showing electronic structure of a crystal is showing one of these.
  • Slope kEn\nabla_{\mathbf{k}} E_n is group velocity; curvature 2En/k2\partial^2 E_n / \partial k^2 is inverse effective mass. Together they govern transport, mobility, and optical-matrix elements.
  • Direct vs indirect gap is the first thing to read off when judging a semiconductor for optoelectronics: only direct-gap materials emit light efficiently.
  • In VASP, a band structure is a two-step recipe: an SCF run on a uniform grid, then a non-SCF run (ICHARG=11\texttt{ICHARG}=11) on a high-symmetry path with line-mode KPOINTS. The eigenvalues land in EIGENVAL and vasprun.xml; pymatgen plots them in five lines.
Section 5.1 Core Insight
"Bands are the inevitable consequence of forcing atomic levels to coexist in a periodic potential. Every electronic property of the crystal — colour, conductivity, magnetism — is a sentence written in the slopes and curvatures of En(k)."
Coming next: Section 5.2 — Density of States — where we integrate En(k)E_n(\mathbf{k}) over the Brillouin zone to compute g(E)g(E), the function that thermodynamics and optical experiments actually observe.
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